Infineon SPI08N50C3IN

Infineon · FETs & Power MOSFETs · MPN SPI08N50C3IN

No reviews yet — be the first to review Infineon SPI08N50C3IN.

Specifications

Drain to Source Voltage600V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)7.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)970pF

Technical details

600V 7.3A 5.5V 83W 600mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs