Infineon SPD18P06PGBTMA1

Infineon · FETs & Power MOSFETs · MPN SPD18P06PGBTMA1

No reviews yet — be the first to review Infineon SPD18P06PGBTMA1.

Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)18.6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)130mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)860pF
TypeP-Channel

Technical details

P-Channel 60V 18.6A 80W Surface Mount TO-252

Related FETs & Power MOSFETs