Infineon SPD08N50C3

Infineon · FETs & Power MOSFETs · MPN SPD08N50C3

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)7.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)750pF

Technical details

500V 7.6A 3V 83W 600mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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