Infineon · FETs & Power MOSFETs · MPN SPD08N50C3
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 7.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 750pF |
500V 7.6A 3V 83W 600mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS