Infineon · FETs & Power MOSFETs · MPN SPD06N80C3
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 900mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 785pF |
| Type | N-Channel |
800V 6A 3.9V 83W 900mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS