Infineon · FETs & Power MOSFETs · MPN SPD04P10PLGBTMA1
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 850mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 372pF |
P-Channel 100V 4.2A 38W Surface Mount TO-252-3