Infineon SPD04P10PLGBTMA1

Infineon · FETs & Power MOSFETs · MPN SPD04P10PLGBTMA1

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)850mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)372pF

Technical details

P-Channel 100V 4.2A 38W Surface Mount TO-252-3

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