Infineon · FETs & Power MOSFETs · MPN SPD04N60C2
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 22.9nC@10V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 950mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 580pF |
600V 4.5A 5.5V 50W 950mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs