Infineon SPD04N50C3

Infineon · FETs & Power MOSFETs · MPN SPD04N50C3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage500V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)470pF
Type-

Technical details

500V 4.5A 50W Surface Mount TO-252

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