Infineon SPD03N60C3ATMA1

Infineon · FETs & Power MOSFETs · MPN SPD03N60C3ATMA1

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)400pF

Technical details

600V 3.2A 3.9V 38W 1.4Ω@10V 1 N-channel TO-252-3-1 Single FETs, MOSFETs RoHS

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