Infineon SPD02N80C3

Infineon · FETs & Power MOSFETs · MPN SPD02N80C3

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)290pF
Type-

Technical details

800V 2A 3.9V 42W 2.7Ω@10V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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