Infineon · FETs & Power MOSFETs · MPN SPD02N80C3
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 290pF |
| Type | - |
800V 2A 3.9V 42W 2.7Ω@10V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS