Infineon · FETs & Power MOSFETs · MPN SPB80P06PG
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| Gate Charge(Qg) | 173nC@48V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 340W |
| Reverse Transfer Capacitance (Crss@Vds) | 546pF |
| RDS(on) | 23mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.033nF |
60V 80A 3V 340W 23mΩ@10V 1 P-Channel TO-263-3 Single FETs, MOSFETs RoHS