Infineon · FETs & Power MOSFETs · MPN SPB80N06SL2-7
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 620pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 158W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.65nF |
| Type | N-Channel |
55V 80A 2V 158W 11mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS