Infineon · FETs & Power MOSFETs · MPN SPB21N50C3
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| Gate Charge(Qg) | 95nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 190mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 2.4nF |
500V 21A 2.1V 208W 190mΩ@10V TO-263-3 Single FETs, MOSFETs RoHS