Infineon · FETs & Power MOSFETs · MPN SPB18P06PGATMA1
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 18.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 81.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 130mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 860pF |
| Type | P-Channel |
60V 18.7A 4V 81.1W 130mΩ@10V 1 P-Channel P-Channel TO-263-3 Single FETs, MOSFETs RoHS