Infineon · FETs & Power MOSFETs · MPN SPB100N03S203T
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 150nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 700pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.02nF |
30V 100A 2.1V 300W 3mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS