Infineon SPB100N03S203T

Infineon · FETs & Power MOSFETs · MPN SPB100N03S203T

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)150nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)700pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.02nF

Technical details

30V 100A 2.1V 300W 3mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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