Infineon · FETs & Power MOSFETs · MPN SPB08N03L
No reviews yet — be the first to review Infineon SPB08N03L.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 103nC@10V |
| Output Capacitance(Coss) | 1.17nF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 190mΩ@10V |
| Input Capacitance(Ciss) | 3nF |
600V 20A 5.5V 208W 190mΩ@10V Single FETs, MOSFETs RoHS