Infineon SPB07N60C3

Infineon · FETs & Power MOSFETs · MPN SPB07N60C3

No reviews yet — be the first to review Infineon SPB07N60C3.

Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)7.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF

Technical details

650V 7.3A 3.9V 83W 600mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs