Infineon · FETs & Power MOSFETs · MPN SPB02N60S5ATMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 9.5nC@10V |
| Output Capacitance(Coss) | 77pF |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF |
| RDS(on) | 3Ω@10V |
| Input Capacitance(Ciss) | 240pF |
| Type | N-Channel |
600V 1.8A 5.5V 25W 3Ω@10V N-Channel TO-263-3-2 Single FETs, MOSFETs RoHS