Infineon · FETs & Power MOSFETs · MPN SPA20N65C3XK
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 114nC@10V |
| Current - Continuous Drain(Id) | 20.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 34.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
650V 20.7A 3.9V 34.5W 190mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS