Infineon SPA20N65C3

Infineon · FETs & Power MOSFETs · MPN SPA20N65C3

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Specifications

Gate Charge(Qg)114nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)780pF
Current - Continuous Drain(Id)20.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation34.5W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

650V 20.7A 3.9V 34.5W 190mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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