Infineon SPA11N60C3

Infineon · FETs & Power MOSFETs · MPN SPA11N60C3

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Specifications

Gate Charge(Qg)60nC
Drain to Source Voltage650V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
Type-

Technical details

N-Channel 650V 11A 33W Through Hole TO-220FP

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