Infineon SPA04N60C3

Infineon · FETs & Power MOSFETs · MPN SPA04N60C3

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)490pF

Technical details

650V 4.5A 3.9V 31W 950mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

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