Infineon SP000089223

Infineon · FETs & Power MOSFETs · MPN SP000089223

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Specifications

Gate Charge(Qg)5.4nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)260mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)20Ω@2.8V
Number1 P-Channel
Input Capacitance(Ciss)104pF
TypeP-Channel

Technical details

250V 260mA 2V 1.8W 20Ω@2.8V 1 P-Channel P-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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