Infineon SMBTA42E6327

Infineon · Transistors (BJTs) · MPN SMBTA42E6327

No reviews yet — be the first to review Infineon SMBTA42E6327.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)70MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain25
Pd - Power Dissipation360mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 300V 500mA 70MHz 360mW Surface Mount SOT-23-3

Related Transistors (BJTs)