Infineon SI4420DYPBF

Infineon · FETs & Power MOSFETs · MPN SI4420DYPBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)78nC@10V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)12.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.24nF
TypeN-Channel

Technical details

30V 12.5A 1V 2.5W 9mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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