Infineon MMBT2907ALT1HTSA1

Infineon · Transistors (BJTs) · MPN MMBT2907ALT1HTSA1

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation330mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 330mW Surface Mount SOT-23

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