Infineon · FETs & Power MOSFETs · MPN ITD50N04S4L07ATMA1
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| Current - Continuous Drain(Id) | 50A |
|---|---|
| Pd - Power Dissipation | 46W |
| RDS(on) | 10.6mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.48nF |
| Gate Charge(Qg) | 33nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 480pF |
50A 46W 10.6mΩ@4.5V 2.2V 2 N-Channel TO-252-5 FET, MOSFET Arrays RoHS