Infineon · FETs & Power MOSFETs · MPN ISZ810P06LMATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 42.8nC@10V |
| Output Capacitance(Coss) | 210pF |
| Current - Continuous Drain(Id) | 19.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 81mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.4nF |
| Type | P-Channel |
60V 19.5A 2V 83W 81mΩ@4.5V 1 P-Channel P-Channel PG-TSDSON-8(3.2x3.2) Single FETs, MOSFETs RoHS