Infineon ISZ75DP15LMATMA1

Infineon · FETs & Power MOSFETs · MPN ISZ75DP15LMATMA1

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)30.4nC@10V
Current - Continuous Drain(Id)5.1A
Output Capacitance(Coss)48pF
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)770mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF
TypeP-Channel

Technical details

150V 5.1A 2V 50W 770mΩ@4.5V 1 P-Channel P-Channel PG-TSDSON-8(3.2x3.2) Single FETs, MOSFETs RoHS

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