Infineon · FETs & Power MOSFETs · MPN ISZ56DP15LMATMA1
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 62pF |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 560mΩ@10V |
| Input Capacitance(Ciss) | 1.4nF |
| Type | P-Channel |
150V 6.7A 2V 62.5W 560mΩ@10V P-Channel TSDSON-8FL Single FETs, MOSFETs RoHS