Infineon · FETs & Power MOSFETs · MPN ISZ520N20NM6ATMA1
No reviews yet — be the first to review Infineon ISZ520N20NM6ATMA1.
| Gate Charge(Qg) | 14.9nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 26A |
| Output Capacitance(Coss) | 160pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 88W |
| RDS(on) | 52mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Input Capacitance(Ciss) | 960pF |
| Type | N-Channel |
200V 26A 4.5V 88W 52mΩ@10V N-Channel TSDSON-8 Single FETs, MOSFETs RoHS