Infineon · FETs & Power MOSFETs · MPN ISZ24DP10LMATMA1
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| Gate Charge(Qg) | 39.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10.3A |
| Output Capacitance(Coss) | 98pF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 63W |
| RDS(on) | 280mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Input Capacitance(Ciss) | 1.4nF |
| Type | P-Channel |
100V 10.3A 2V 63W 280mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS