Infineon · FETs & Power MOSFETs · MPN ISZ113N10NM5LF2ATMA1
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 63A |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
100V 63A 3.1V 100W 1 N-channel N-Channel SON-8(3.2x3.2) Single FETs, MOSFETs RoHS