Infineon · FETs & Power MOSFETs · MPN ISZ0804NLSATMA1
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| Gate Charge(Qg) | 9.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 10.3mΩ@10V;15.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
| Type | N-Channel |
N-Channel 100V 58A 60W Surface Mount TSDSON-8