Infineon · FETs & Power MOSFETs · MPN ISZ0501NLSATMA1
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| Gate Charge(Qg) | 6.3nC |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.1W |
| RDS(on) | 3.1mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 910pF |
N-Channel 25V 40A 2.1W Surface Mount TSDSON-8FL