Infineon ISZ019N03L5SATMA1

Infineon · FETs & Power MOSFETs · MPN ISZ019N03L5SATMA1

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 30V 40A Surface Mount TSDSON-8FL

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