Infineon IST019N08NM5AUMA1

Infineon · FETs & Power MOSFETs · MPN IST019N08NM5AUMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)94nC@10V
Current - Continuous Drain(Id)290A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation313W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.6nF
TypeN-Channel

Technical details

80V 290A 3.8V 313W 1.9mΩ@10V 1 N-channel N-Channel HSOF-5 Single FETs, MOSFETs RoHS

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