Infineon IST011N06NM5

Infineon · FETs & Power MOSFETs · MPN IST011N06NM5

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)399A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)1.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.1nF
TypeN-Channel

Technical details

N-Channel 60V 399A 3.8W STOLL

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