Infineon · FETs & Power MOSFETs · MPN ISS55EP06LMXTSA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 590pC@10V |
| Output Capacitance(Coss) | 3.4pF |
| Current - Continuous Drain(Id) | 180mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| RDS(on) | 7Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 18pF |
| Type | P-Channel |
P-Channel 60V 0.18A 0.4W Surface Mount SOT-23-3-5