Infineon · FETs & Power MOSFETs · MPN ISS17EP06LMXTSA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.79nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 9pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 360mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 2.2Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 55pF |
P-Channel 60V 0.3A 0.36W Surface Mount SOT-23