Infineon · FETs & Power MOSFETs · MPN ISP75DP06LM
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| Gate Charge(Qg) | 4nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 4.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 120pF |
60V 1.1A 1V 4.2W 750mΩ@10V 1 P-Channel SOT-223-4 Single FETs, MOSFETs RoHS