Infineon · FETs & Power MOSFETs · MPN ISP25DP06NM
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| Gate Charge(Qg) | 10.8nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 4.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 250mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 420pF |
P-Channel 60V 1.9A 4.2W Surface Mount SOT-223