Infineon · FETs & Power MOSFETs · MPN ISP20EP10LMXTSA1
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| Gate Charge(Qg) | 2.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 990mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 4.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 2.2Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 170pF |
| Type | P-Channel |
P-Channel 100V 0.99A 4.2W Surface Mount SOT-223-4