Infineon · FETs & Power MOSFETs · MPN ISP13DP06NMS
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| Gate Charge(Qg) | 20.2nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 790pF |
60V 2.8A 2.1V 5W 125mΩ@10V 1 P-Channel SOT-223-3 Single FETs, MOSFETs RoHS