Infineon · FETs & Power MOSFETs · MPN ISP12DP06NM
No reviews yet — be the first to review Infineon ISP12DP06NM.
| Gate Charge(Qg) | 20.2nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 790pF |
| Type | P-Channel |
P-Channel 60V 1.8W Surface Mount SOT-223