Infineon · FETs & Power MOSFETs · MPN ISG0616N10NM5HSCATMA1
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 139A |
| Pd - Power Dissipation | 167W |
| RDS(on) | 3.4mΩ@10V;4.3mΩ@6V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.7nF |
| Gate Charge(Qg) | 52nC@10V |
| Operating Temperature | -55℃~+175℃ |
139A 167W 3V 2 N-Channel PG-WHITFN-10-1(6.3x6) FET, MOSFET Arrays RoHS