Infineon · FETs & Power MOSFETs · MPN ISG0614N06NM5HSCATMA1
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 233A |
| Pd - Power Dissipation | 167W |
| RDS(on) | 1.6mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| Input Capacitance(Ciss) | 6.4nF |
| Gate Charge(Qg) | 68nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 1.44nF |
233A 167W 1.6mΩ@10V 3.3V PGWHITFN-10 FET, MOSFET Arrays RoHS