Infineon · FETs & Power MOSFETs · MPN ISG0613N04NM6HSCATMA1
No reviews yet — be the first to review Infineon ISG0613N04NM6HSCATMA1.
| Current - Continuous Drain(Id) | 299A |
|---|---|
| RDS(on) | 0.88mΩ@10V |
| Pd - Power Dissipation | 167W |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 6.2nF |
| Gate Charge(Qg) | 69nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 2.03nF |
N-Channel 40V 299A 167W WHITFN-10