Infineon · FETs & Power MOSFETs · MPN ISC800P06LMATMA1
No reviews yet — be the first to review Infineon ISC800P06LMATMA1.
| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 210pF |
| Current - Continuous Drain(Id) | 19.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 100mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.4nF |
60V 19.6A 2V 83W 100mΩ@4.5V 1 P-Channel P-Channel TDSON-8 Single FETs, MOSFETs RoHS