Infineon · FETs & Power MOSFETs · MPN ISC750P10LMATMA1
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| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 32A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 86mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.7nF |
| Type | P-Channel |
100V 32A 2V 188W 86mΩ@4.5V 1 P-Channel P-Channel TDSON-8-7 Single FETs, MOSFETs RoHS