Infineon ISC230N10NM6ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC230N10NM6ATMA1

No reviews yet — be the first to review Infineon ISC230N10NM6ATMA1.

Specifications

Gate Charge(Qg)7.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)9.8pF
RDS(on)30mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)690pF
TypeN-Channel

Technical details

N-Channel 100V 31A 48W Surface Mount TDSON-8FL

Related FETs & Power MOSFETs